inchange semiconductor isc product specification isc silicon npn power transistor MJE15032 description collector-emitter sustaining voltage- : v ceo(sus) = 250v(min) dc current gain - : h fe = 50 (min) @i c = 0.5 a : h fe = 10 (min) @i c = 2.0 a complement to type mje15033 applications designed for use as high?frequency drivers in audio amplifiers . absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage 250 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current -continuous 8 a i cm collector current-peak 16 a i b b base current 2 a collector power dissipation @t a =25 2 p c collector power dissipation @t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors MJE15032 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma ;i b = 0 b 250 v v ce (sat) collector-emitter saturation voltage i c = 1a ;i b = 0.1a 0.5 v v be( on ) base-emitter on voltage i c = 1a ; v ce = 5v 1.0 v i cbo collector cutoff current v cb = 150v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.5a ; v ce = 5v 50 h fe-2 dc current gain i c = 1a ; v ce = 5v 50 h fe-3 dc current gain i c = 2a ; v ce = 5v 10 f t current gain-bandwidth product i c = 0.5a; v ce = 10v; f test = 1.0mhz 30 mhz isc website www.iscsemi.cn
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